کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1812494 | 1025617 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Pressure response to electronic structures of bulk semiconductors at room temperature
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We studied the effect of hydrostatic pressure (at room temperature) on the electronic band structures for Si, GaAs, and AlAs bulk semiconductors. Our calculations were based on the local empirical pseudopotential formalism. Also, the dependence of the energy gaps for Si, GaAs and AlAs semiconductors on the hydrostatic pressure were calculated. We found that the most values of the electronic energy bands were more sensitive to the pressure dependent form factor associated with the reciprocal lattice vectors of |ΔG→|2=11 than any other value. Our results for band gaps are found to be in good agreement with the available experimental data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 405, Issue 17, 1 September 2010, Pages 3709–3713
Journal: Physica B: Condensed Matter - Volume 405, Issue 17, 1 September 2010, Pages 3709–3713
نویسندگان
A.M. Elabsy, A.R. Degheidy, H.G. Abdelwahed, E.B. Elkenany,