کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1812575 | 1025618 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thickness effects on the Coulomb drag between low density electron layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thickness effects on the Coulomb drag between low density electron layers Thickness effects on the Coulomb drag between low density electron layers](/preview/png/1812575.png)
چکیده انگلیسی
Using the Vignale-Singwi approach with the hybrid Hubbard-STLS local-field corrections suggested by Yurtsever et al. we have calculated the local-field corrections, quantum-well form factors and Coulomb drag resistivity for different values of well width. We have shown that the Coulomb drag resistivity increases with increase in well width when the separation between the wells remained unchanged. Our results also indicate that the local-field corrections and inter-layer form factors depend weakly on the well width and the dependence of Coulomb drag resistivity on the well width is determined by the intra-layer quantum-well form factor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 405, Issue 16, 15 August 2010, Pages 3497-3500
Journal: Physica B: Condensed Matter - Volume 405, Issue 16, 15 August 2010, Pages 3497-3500
نویسندگان
Nguyen Quoc Khanh,