کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1812801 1525247 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Doped high-Tc superconductors under pressure
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Doped high-Tc superconductors under pressure
چکیده انگلیسی
Within the BCS framework generalized Fermi surface topologies, modeled with band overlapping, are proposed as a mechanism to enhance the electronic density of states at the Fermi level. This band overlapping allows the high-Tc values observed in cuprate superconductors at different pressures. With this approach the correlation between the critical temperature, the charge carrier density and the pressure is obtained in terms of the coupling constant and the band overlapping parameter. In order to obtain numerical results the model is applied to a Tl-based superconductor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 403, Issues 23–24, 15 December 2008, Pages 4209-4212
نویسندگان
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