کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1812814 | 1525247 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Charge trapping effects in photovoltage measurements of (Ga,Mn)As
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report charge trapping effects in a ferromagnetic (Ga,Mn)As thin film observed during measurements of the photovoltage under inhomogeneous illumination conditions. Using a laser diode as the excitation source, the temperature-dependent response has been observed, with open-circuit voltages as high as −1.4 V. The unexpectedly large and sharp temperature-dependent responses are explained in terms of the excitation of photo-generated charges and their trapping in localised states, or separation of the charges across the film/substrate interface. The sharp features found in the signals suggest their possible use for studying localised trapping states in semiconductors using inhomogeneous illumination.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 403, Issues 23–24, 15 December 2008, Pages 4288–4291
Journal: Physica B: Condensed Matter - Volume 403, Issues 23–24, 15 December 2008, Pages 4288–4291
نویسندگان
S. Granville, L. Gravier, G. Kobayashi, T. Mori, H. Makino, T. Yao, J.-Ph. Ansermet,