کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1813032 1025628 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
On the profile of temperature dependent electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures at various frequencies
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
On the profile of temperature dependent electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures at various frequencies
چکیده انگلیسی

The temperature (T) dependence of electrical and dielectric characteristics such as series resistance (Rs), dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ), and real and imaginary part of electrical modulus (M′ and M″) of the Au/SiO2/n-GaAs (MOS) structures have been investigated in the temperature range of 80–350 K at various frequencies by using experimental capacitance (C) and conductance (G/w) measurements. Experimental results show that both C and G/w characteristics were quite sensitive to frequency and temperature at especially high temperatures and low frequencies due to a continuous density distribution of interface states and their relaxation time, and thermal restructuring and reordering of the interface. Series resistance values of this device obtained from Nicollian method decrease with increasing frequency and temperature. The ε′, ε″, tan δ, and M′ and M″ were found a strong function of frequency and temperature. While the values of ε′, ε″, and tan δ decrease, M′ and M″ increase with increasing frequency. Also, while ε′ and ε″ increase, M′ and M″ decrease with increasing temperature. The tan δ and M′ values are almost independent temperature especially at high frequencies (f≥500 kHz).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issue 21, 15 November 2009, Pages 4221–4224
نویسندگان
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