Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

FTIR study of the evolution of multivacancy-oxygen-related defects in the temperature range 100-350 °C in Czochralski-grown Si samples irradiated with different particles (10 MeV electrons and 5 MeV neutrons) has been carried out. Appearance of two absorption bands positioned at 833.4 and 842.4 cm−1 has been found upon annealing of the divacancy related absorption band at 2767 cm−1. The 833.4 cm−1 band is assigned to a divacancy-oxygen defect. The 842.4 cm−1 band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect formed via interaction of mobile V3 with Oi atoms.