کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1813365 | 1525241 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Massive point defect redistribution near semiconductor surfaces and interfaces and its impact on Schottky barrier formation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Nanoscale depth-resolved cathodoluminescence spectroscopy calibrated with deep level transient spectroscopy of native point defects and capacitance-voltage measurements of free carrier densities, all at the same metal-semiconductor interface, demonstrate that native point defects can (i) increase by order-of-magnitude in densities with tens of nanometers of the semiconductor surface, (ii) alter free carrier concentrations and band profiles with the surface space charge regions, and (iii) dominate the Schottky barrier formation for metal contacts to ZnO and many other single crystal compound semiconductors. The spatial redistribution of electrically active defects within the surface space charge can be understood in terms of temperature-dependent atomic diffusion enabled by low formation energies and driven by strain and electric fields as well as metal-specific chemical reactions near room temperature, consistent with first-principles calculations of interfacial segregation and migration barriers. These results underscore the importance of native point defects in charge transport and barrier formation at semiconductor interfaces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issues 23â24, 15 December 2009, Pages 4768-4773
Journal: Physica B: Condensed Matter - Volume 404, Issues 23â24, 15 December 2009, Pages 4768-4773
نویسندگان
L.J. Brillson, Y. Dong, D. Doutt, D.C. Look, Z.-Q. Fang,