کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1813374 | 1525241 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lattice location of the group V elements As and Sb in ZnO
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The lattice locations of the potential p-type dopants arsenic and antimony in single-crystalline ZnO were studied by means of the electron emission channeling method following the implantation of radioactive 73As and 124Sb isotopes. The majority of the implanted As and Sb probe atoms was found to occupy substitutional Zn sites, with the possible fraction on substitutional O sites being at maximum a few percent. The obtained results illustrate the difficulty in introducing oversized group V impurities on O sites and thus put further into question whether these elements may act as simple chemical dopants in ZnO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issues 23–24, 15 December 2009, Pages 4803–4806
Journal: Physica B: Condensed Matter - Volume 404, Issues 23–24, 15 December 2009, Pages 4803–4806
نویسندگان
U. Wahl, J.G. Correia, S. Decoster, T. Mendonça,