کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1813523 1525245 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Muonium dynamics in doped Si probed by photoexcited TF-μμSR measurements
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Muonium dynamics in doped Si probed by photoexcited TF-μμSR measurements
چکیده انگلیسی

Photoexcited TF-μμSR measurements have been used recently to investigate muonium dynamics in high resistivity Si. In this paper, we report investigations of p-type and n-type Si. It is shown that illumination can induce a change in the relaxation rates of the detected muon signal in differently doped samples under both LF and TF configurations. In addition, the temperature dependence of MuBC+ in p-type Si suggests that the diamagnetic charge exchange processes are similar to that of intrinsic Si.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issues 5–7, 15 April 2009, Pages 852–855
نویسندگان
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