کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1813630 1025638 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Unforeseen properties of MnAs epilayers grown on GaAs semiconductor
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Unforeseen properties of MnAs epilayers grown on GaAs semiconductor
چکیده انگلیسی
This paper reviews some recent works performed on MnAs/GaAs thin films and other related structures grown by molecular beam epitaxy. The impact of epitaxy on the magneto-structural properties of MnAs and possible applications of MnAs epilayers are discussed. A brief account of recent results obtained on the magneto-transport in MnAs/GaAs/MnAs magnetic tunnel junctions is also given, highlighting several appealing and promising properties of this system for spintronics applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issue 18, 1 October 2009, Pages 2684-2688
نویسندگان
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