کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1813737 1025640 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures
چکیده انگلیسی

Si thin films with different structures were deposited by plasma enhanced chemical vapor deposition (PECVD), and characterized via Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The passivation effect of such different Si thin films on crystalline Si surface was investigated by minority carrier lifetime measurement via a method, called microwave photoconductive decay (μPCD), for the application in HIT (heterojunction with intrinsic thin-layer) solar cells. The results show that amorphous silicon (a-Si:H) has a better passivation effect due to its relative higher H content, compared with microcrystalline (μc-Si) silicon and nanocrystalline silicon (nc-Si). Further, it was found that H atoms in the form of Si–H bonds are more preferred than those in the form of Si–H2 bonds to passivate the crystalline Si surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 405, Issue 1, 1 January 2010, Pages 61–64
نویسندگان
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