کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1813851 1525249 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic structure of Co (Si, Ge) compounds: Ab-initio calculation
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electronic structure of Co (Si, Ge) compounds: Ab-initio calculation
چکیده انگلیسی
The structural and electronic properties of Co4Si4−xGex (x=0-4) compounds are investigated using density functional theory (DFT). The calculations are based on a plane-wave expansion of the electronic wave functions using pseudo-potential method and performed using the local density approximation (LDA). It is found that these compounds are semimetals with a slight overlap between valence and conduction bands. The tendency towards metallic behavior of the compounds increases in terms of Ge concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 403, Issues 19–20, 1 October 2008, Pages 3503-3508
نویسندگان
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