Crystallization behavior of GeSe2–Ga2Se3–CsI glasses studied by Differential Thermal Analysis

GeSe2–Ga2Se3–CsI chalcohalide glasses had been prepared by the melt-quenching technique. With the addition of CsI, the short wavelength cut-off edge of the glasses shifts to the short wavelength gradually, while the long wavelength cut-off edge located at ∼16 μm is nearly unchanged. Thermal properties were measured by Differential Thermal Analysis (DTA). From the heating rate dependence of crystallization temperature, the activation energy for crystallization (E) and the order parameter (n) were calculated by the Kissinger equation. The results show that the activation energy of crystallization decreases dramatically with increasing of CsI content, and the most probable crystallization mechanism is volume controlled one-dimensional growth.