The adsorption of In on the surface of (0 0 1) CdTe

To understand CdTe doping with In, first-principle calculations are performed to obtain the various kinds of surface–structure for In on CdTe (0 0 1) surface. Of all the structures examined, the structure of CdTe (0 0 1) as caused by In adsorption atoms at the fourfold hollow sites with 0.25 monolayer coverage is the most energetically favorable. In atoms are adsorbed on the Cd-terminated surface, whereas below the Te-terminated surface. For the Cd-terminated surface, cadmium vacancy can form spontaneously and is energetically favorable. In atoms are likely to be adsorbed/incorporated at an interstitial site on Te-terminated CdTe (0 0 1) surfaces for most of the range of the chemical potential.