کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1814213 | 1025646 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of the effects of porous layer on the electrical properties of Pt/n-GaN Schottky contacts
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of the effects of porous layer on the electrical properties of Pt/n-GaN Schottky contacts Investigation of the effects of porous layer on the electrical properties of Pt/n-GaN Schottky contacts](/preview/png/1814213.png)
چکیده انگلیسی
This article reports the effects of porosity on the enhancement of the Schottky barrier height (SBH) and reduction of the leakage current of Pt Schottky diode based on n-type GaN. The porous GaN layer in this work was generated by electroless chemical etching under UV illumination. For comparative study, two additional samples, i.e. one as-grown sample and one thermally treated sample, were also prepared. The structural studies showed that the porous GaN sample has a relatively rough surface morphology with slightly broader X-ray diffraction peak of the (0Â 0Â 0Â 2) plane. The current-voltage (I-V) measurements revealed that the electrical characteristics of the Pt Schottky diode were improved significantly by the presence of the porous layer, in which SBH was observed to be enhanced by 27%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 403, Issue 18, 1 September 2008, Pages 3105-3109
Journal: Physica B: Condensed Matter - Volume 403, Issue 18, 1 September 2008, Pages 3105-3109
نویسندگان
F.K. Yam, Z. Hassan,