Electrical resistivity of Yb(Rh1-xCox)2Si2Yb(Rh1-xCox)2Si2 single crystals at low temperatures

We report low-temperature measurements of the electrical resistivity of Yb(Rh1-xCox)2Si2Yb(Rh1-xCox)2Si2 single crystals with 0≤x≤0.120≤x≤0.12. The isoelectronic substitution of Co on the Rh site leads to a decrease of the unit cell volume which stabilizes the antiferromagnetism. Consequently, the antiferromagnetic transition temperature increases upon Co substitution. For x=0.07x=0.07 Co content a subsequent low-temperature transition is observed in agreement with previous susceptibility measurements and results on YbRh2Si2YbRh2Si2 under hydrostatic pressure. Above the Néel transition the resistivity follows a linear temperature dependence of a non-Fermi liquid similar to that of YbRh2Si2YbRh2Si2.