کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1814564 1025651 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Correlation between electrical, optical properties and Ag2+ centers of ZnO:Ag thin films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Correlation between electrical, optical properties and Ag2+ centers of ZnO:Ag thin films
چکیده انگلیسی

ZnO:Ag films have been fabricated on a n-Si (1 1 1) substrate and then annealed in situ in an O2 ambient, using Ag2O as a silver dopant by pulsed laser deposition. Hall measurements reveal that the films prepared at 400 and 450 °C show p-type behavior with a hole concentration of 6.3×1016–1.2×1017 cm–3 and a mobility of 2.48–3.30 cm2/V s. By combining Hall measurements, electron paramagnetic resonance (EPR) signals, and photoluminescence (PL) spectra, a correlation is observed between the free hole carriers, the Ag2+ centers, and the neutral acceptor bound excitons. Additionally, the p-ZnO:Ag/n-Si heterojunction shows a diode-like I–V characteristic.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 403, Issue 12, 1 June 2008, Pages 2004–2007
نویسندگان
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