Contact characterizations of ZrN thin films obtained by reactive sputtering

The contact properties of ZrNx on p-type Si obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed as determined by forward current–voltage (I–V) and capacitance–voltage (C–V) measurements. The zero-bias barrier heights evaluated by I–V were in the range of 0.55–0.63 V, which is higher than the value of 0.53 V of as-deposited amorphous TiN.