کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1814680 1025653 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of photovoltage evolution of ZnO films using a scanning Kelvin probe system
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Characterization of photovoltage evolution of ZnO films using a scanning Kelvin probe system
چکیده انگلیسی

Work function (WF) and surface photovoltage evolution of films can be measured using the Kelvin probe technique, and further analysis of the photoelectronic behavior can provide information on the energy level structure. In this paper, a theoretical analysis to measure surface photovoltage using Kelvin probe technique is presented. Based on this analysis, the surface photovoltage and its time-resolved evolution process as well as the energy level structure of ZnO films are determined using a scanning Kelvin probe. The present study therefore provides a simple and practical methodology for the characterization of the electronic behavior of films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issue 16, 1 August 2009, Pages 2197–2201
نویسندگان
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