Determination of trap depth and trap density in Se70Te30−xZnx thin films using thermally stimulated current measurements

In the present paper concentration of traps (Nt) and trap depth (Et) have been calculated by thermally stimulated current (TSC) measurements in amorphous Se70Te30−xZnx (x=2, 4) thin films. These measurements are carried out at three different heating rates. It is observed that the amount of thermally stimulated current gradually increases and the temperature (Tm), at which maxima in TSC occurs, shifts to higher temperatures with increasing heating rates (β) as expected. The trap depth is found to be quite different for x=2 and x=4. The concentration of traps also increases slightly at higher concentration of Zn.