کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1814690 1025653 2009 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Current–voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation hard detectors
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Current–voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation hard detectors
چکیده انگلیسی

Current–voltage (I–V) measurements were carried out on Schottky diodes fabricated on undoped and on metal-doped p-type silicon. The metals used are gold, platinum, erbium and niobium. The I–V data were used to extract the saturation current, the ideality factor and the Schottky barrier height for each of the five diodes. These parameters were correlated to the defect levels generated by the metals in silicon. The results show that in all cases the silicon has become relaxation-like after doping since the device current is Ohmic. This is in agreement with the existence of the midgap defect in all the doped devices as compiled from the literature. Such metal doped (or relaxation) devices have been found to perform better as radiation-hard particle detectors.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issue 16, 1 August 2009, Pages 2251–2258
نویسندگان
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