One-phonon-assisted resonant electron Raman scattering in GaAs (CdS) quantum dots

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering process associated with the bulk longitudinal optical (LO) and surface optical (SO) phonon modes in semiconductor quantum dots (QDs) for two different materials. Electron states are considered to be confined within QDs with infinite potential barriers. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Some singularities for various QD size in the Raman spectra are found and interpreted. The numerical results are also compared with those of experiments.