کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1814811 | 1025655 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Multi-crystalline silicon as active medium for terahertz intracenter lasers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Stimulated emission at terahertz frequencies has been obtained from multi-crystalline silicon doped by phosphor under optical excitation by a mid-infrared laser. The silicon samples consist of grains with a characteristic size distribution in the range from 50 to 500 μm. The maximum operation temperature of the laser made from multi-crystalline silicon is 6 K less than that of monocrystalline lasers and the maximum output power is three times less while its laser threshold is only slightly higher and the emission frequency is the same. These effects are attributed to internal strain and enhanced phonon scattering induced by grain boundaries.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 403, Issue 4, 1 March 2008, Pages 535-538
Journal: Physica B: Condensed Matter - Volume 403, Issue 4, 1 March 2008, Pages 535-538
نویسندگان
S.G. Pavlov, H.-W. Hübers, N.V. Abrosimov, H. Riemann, L.V. Gavrilenko, A.V. Antonov,