Growth mechanism and optoelectronic properties of nanocrystalline In2O3 films prepared by chemical spray pyrolysis of metal-organic precursor

Thin films of indium oxide, In2O3, were deposited by chemical spray pyrolysis technique, using aqueous alcoholic solutions of indium acetylacetonate (In-acac) precursor, on glass substrates kept at temperatures between 300 and 500 °C. The structural, optical, and electrical properties have been investigated as a function of deposition temperature, precursor concentration, carrier gas pressure, and substrate-to-nozzle distance. X-ray diffraction studies showed that the formation of nanocrystalline In2O3 films is preferentially oriented along (2 2 2) plane. The surface morphological modifications with substrate temperature were observed using scanning electron and atomic force microscopic studies. Optical transmittance behavior of the films in the visible and IR region was strongly affected by the deposition parameters. The optical band gap values observed are between 3.53 and 3.68 eV. The long wavelength limit of refractive index is 1.83. The Hall mobility is found to vary from 23 to 37 cm2/V s and carrier density is found nearly constant at about 1020 cm−3.