کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1814972 | 1525254 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Passivation and reactivation of carriers in B- and P-doped Si treated with atomic hydrogen
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The formation and annihilation of hydrogen (H)-related complexes were investigated in boron (B)- or phosphorus (P)-doped Si treated with high concentration of atomic H. The passivation and reactivation process of dopant carriers were significantly different between the p-type and n-type specimens. The differences are explained by the stable sites of the H atoms in the p-type and n-type specimens and, in turn, by the formation of H-related defects: i.e., H multiple trapping centers are formed by bond-breaking due to H atoms only in p-type B-doped Si. The formation of such defects retards the reactivation of B dopants by annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 401–402, 15 December 2007, Pages 175–178
Journal: Physica B: Condensed Matter - Volumes 401–402, 15 December 2007, Pages 175–178
نویسندگان
N. Fukata, S. Sato, S. Fukuda, K. Ishioka, M. Kitajima, S. Hishita, K. Murakami,