کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1815023 | 1525254 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of the hybrid ZnO LED structure grown on p-type GaN by metal organic chemical vapor deposition
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
LEDs based on the n-ZnO/p-GaN heterojunction were successfully fabricated with the top/middle/bottom layer sequence of ZnO/ZnO nanorods/p-GaN by continuously controlling the growth parameters via metal organic chemical vapor deposition. The ZnO top layer was deposited as a contact layer for the application of nanorods as an active layer, while p-GaN was used as a p-type layer, instead of p-ZnO. The ZnO film grown on ZnO nanorods with high crystalline quality on GaN exhibited the epitaxial properties of a single domain. The light-emitting device fabricated using this hybrid structure demonstrated a forward turn-on voltage of 11 V and a high reverse current, which require further development for device fabrication.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 401–402, 15 December 2007, Pages 386–390
Journal: Physica B: Condensed Matter - Volumes 401–402, 15 December 2007, Pages 386–390
نویسندگان
Dong Chan Kim, Won Suk Han, Bo Hyun Kong, Hyung Koun Cho, Chang Hee Hong,