Electronic and photovoltaic properties of p-Si/C70 heterojunction diode

Electronic and photovoltaic properties of p-Si/C70 heterojunction diode have been investigated. The ideality factor n and barrier height φb values of the diode were found to be 1.86 and 0.69 eV, respectively. The diode indicates a non-ideal current-voltage behaviour due to the ideality factor being higher than unity. This behaviour results from the effect of series resistance and the presence of an interfacial layer. The series resistance RS and ideality factor n values were determined using Cheng's method and the obtained values are 2.21×105 Ω and 1.86, respectively. The device shows photovoltaic behaviour with a maximum open-circuit voltage of 0.22 V and a short-circuit current of 0.35 μA under 6 mW/cm2 light intensity.