Temperature-dependent current–voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height

The current–voltage (I–V) characteristics of Au/n-InP Schottky contacts have been measured in the temperature range of 70–300 K by steps of 10 K. Our data of the Au/n-InP Schottky contact strongly suggest that the temperature-dependent electron transport at the metal–semiconductor interface is significantly affected by the barrier inhomogeneity. The distribution of local effective SBHs has been modeled by a summation of existence of double Gaussian barrier heights which represents the high- and low-barrier of the full distribution in 170–300 and 70–170 K ranges.