Parameters-dependent third-order nonlinear optical susceptibility for quadratic electro-optic effect in GaN/InGaN multiple quantum wells

Including the contribution of spin–orbit splitting, the wave functions and energy structures of GaN/InxGa1−xN multiple quantum wells (MQWs) have been calculated. For the transition between valence band and conduction band, the third-order nonlinear optical susceptibility χ(3) of quadratic electro-optic effect (QEOE) for the mode whose polarization is vertical to the [0 0 1] direction of the MQWs, has been calculated. The correlations between χ(3) and the width of the MQWs, and the concentration of In, are obtained.