کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1815809 1525262 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The current–voltage characteristics of FSS/n-Si heterojunction diode under dark and illumination
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
The current–voltage characteristics of FSS/n-Si heterojunction diode under dark and illumination
چکیده انگلیسی

The current–voltage characteristics of the organic/inorganic fluorescein sodium salt FSS/n-Si heterojunction diode under dark and illumination have been investigated. The diode parameters such as barrier height and ideality factor were determined. The ideality factor n   value at different temperatures was found to be in range from 6.30 to 4.56. These values suggest that the FSS/n-Si heterojunction diode is a non-ideal contact. A space charge limited-conduction (SCLC) mechanism, where current increases superlinearly, i.e, I∝Vm>2I∝Vm>2, takes place in the diode. The photocurrent properties of the diode under various illuminations have been investigated. The photocurrent in the reverse direction is strongly increased by photo-illumination.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 388, Issues 1–2, 15 January 2007, Pages 226–229
نویسندگان
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