کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1815820 | 1525262 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A theory of density-of-states effective masses in heavily doped silicon at high temperatures and its applications
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
A theory of density-of-states effective masses in the n(p)-type heavily doped silicon at high temperatures, T, was developed, taking into account the effects of nonparabolicity in the band and Fermi–Dirac statistics. It was applied to determine the intrinsic carrier density at 200⩽T (K)⩽500 accurate to within 4.8%, and at 300 K semi-empirical forms for band gap narrowing (BGN) and apparent BGN with an accuracy of 17% and for optical gap with a precision of 1%, giving rise to a satisfactory description of both electrical and optical data. Furthermore, at 280⩽T (K)⩽400, the BGN can be assumed to be T-independent, with a precision of 8.8%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 388, Issues 1–2, 15 January 2007, Pages 285–289
Journal: Physica B: Condensed Matter - Volume 388, Issues 1–2, 15 January 2007, Pages 285–289
نویسندگان
H. Van Cong,