کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816042 | 1525261 | 2007 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes](/preview/png/1816042.png)
The current–voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current–voltage data of the metal–insulator–semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current–voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal–semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal–insulator–semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal–insulator–semiconductor diodes are analysed and possible mechanisms are discussed.
Journal: Physica B: Condensed Matter - Volume 390, Issues 1–2, 1 March 2007, Pages 179–184