کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1816103 1525263 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films
چکیده انگلیسی

We have studied the giant negative electroresistance (ER) in strips and pillars of single-layer La0.9Sr0.1MnO3 films fabricated by micro-fabrication patterning processes, and observed the different voltage–current (V–I) characteristics under current-in-plane (CIP) and current-perpendicular-to-plane (CPP) measurement modes, around room temperature. For the CIP mode, V–I curves show an asymmetry with jumps at the negative bias currents, while a symmetrical hysteresis against the polarity for the CPP one. The mechanism is illuminated in the letter. Furthermore, a large ER is obtained for both modes and the ER ratios increase monotonically with the temperature and bias current, suggestive of a promising potential in future device developments.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 387, Issues 1–2, 1 January 2007, Pages 156–160
نویسندگان
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