کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1816157 1525267 2006 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simple theoretical analysis of the interband optical absorption coefficient in wide-gap semiconductors in the presence of an external electric field and its dependence on a longitudinal magnetic field
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Simple theoretical analysis of the interband optical absorption coefficient in wide-gap semiconductors in the presence of an external electric field and its dependence on a longitudinal magnetic field
چکیده انگلیسی

An attempt is made to present a simplified theoretical analysis of the interband optical absorption coefficient (OAC) due to a constant uniform electric field on the basis of the electron wave vector dependence of the optical matrix element (OME) for the incident photon energy, (ℏωℏω), below and above the band-gap (Eg). It has been found, taking n-GaAs as an example for numerical computation, that the expression of the OAC exhibits an exponential fall-off with the electric field and the photon energy without the consideration of the Wannier–Stark levels, which generally exists in a band due to the external electric field. The effect of a longitudinal magnetic field on the OAC is also studied on the basis of the fact that the transverse wave vector (k⊥) is quantized due to parallel magnetic field and is conserved in the interband optical transition of electrons. Similar results, such as singularity for the case ℏω

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 382, Issues 1–2, 15 June 2006, Pages 26–37
نویسندگان
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