Low-temperature electrical transport properties of disordered Zr100−xSnx alloys

The results on the measurement of resistivitiy of solid solutions of Zr100−xSnx disordered systems between 1.5 and 300 K are being reported. The study reveals that the transport behaviour is dominated by the weak localization and electron-electron interaction (EEI). The low-temperature resistivity in the absence of a magnetic field obeys T1/2 law, which is well explained by the EEI. On the basis of the weak localization theory, the electron-phonon scattering time τe−ph of the Zr100−xSnx alloys has been determined from the magnetoconductivity data. The electron-phonon scattering rate τe-ph-1 has been observed to be obeying a quadratic temperature dependence. This observation owes its explanation to the existing theory of electron-phonon interaction.