کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1816187 1525267 2006 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Manganese as a fast charge carrier trapping center in InP
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Manganese as a fast charge carrier trapping center in InP
چکیده انگلیسی

Significant influence of Mn centers on the radiative and nonradiative recombinations in Czochralski-grown InP:Mn crystals was observed. Time-resolved measurements showed that manganese recombination centers caused very fast, probably subpicosecond, decay of holes and excitons. This recombination was explained by the capture of holes on an excited state of the Mn acceptor. The holes trapping coefficient RMn determined on the order of 10−5 cm3/s provided an estimation of the Mn cross-section for hole capture σp of the order of 10−12 cm2. Electrical transport measurements showed that hopping conductivity dominated at low temperatures. From analysis of the hopping, the wavefunction radius of Mn-bound hole af=0.74±0.1nm was calculated. A model explaining the values of af is presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 382, Issues 1–2, 15 June 2006, Pages 220–228
نویسندگان
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