کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816190 | 1525267 | 2006 | 7 صفحه PDF | دانلود رایگان |
In this article, we report on successful preparation of single phase doped SrBi2Nb2O9 (SBN) ceramics at lower synthesis temperature and a systematic study on effect of partial substitution of Nb+5 (B-site) by V+5 on the lattice constants, microstructure, dielectric, and electrical properties of SBN ferroelectric ceramics. The dielectric and electrical characterization of Vanadium (V+5) doped SBN ceramics have been made in the frequency range of 100 Hz–1 MHz and in the temperature range 400–500 °C. Vanadium doped SBN ceramics have been found to exhibit strong low frequency dielectric dispersion in 100 Hz–100 KHz frequency range at various temperatures. Substituting Nb+5 by much smaller V+5 cation resulted in an increased “rattling space” leading to a higher curie temperature.
Journal: Physica B: Condensed Matter - Volume 382, Issues 1–2, 15 June 2006, Pages 245–251