کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816202 | 1525267 | 2006 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Intermediate bands versus levels in non-radiative recombination
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Intermediate bands versus levels in non-radiative recombination Intermediate bands versus levels in non-radiative recombination](/preview/png/1816202.png)
چکیده انگلیسی
There is a practical interest in developing semiconductors with levels situated within their band gap while preventing the non-radiative recombination that these levels promote. In this paper, the physical causes of this non-radiative recombination are analyzed and the increase in the density of the impurities responsible for the mid-gap levels to the point of forming bands is suggested as the means of suppressing the recombination. Simple models supporting this recommendation and helping in its quantification are presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 382, Issues 1–2, 15 June 2006, Pages 320–327
Journal: Physica B: Condensed Matter - Volume 382, Issues 1–2, 15 June 2006, Pages 320–327
نویسندگان
Antonio Luque, Antonio Martí, Elisa Antolín, César Tablero,