Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements

The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of metal–semiconductor (Sn/p-Si) Schottky contacts were measured in the temperature range 150–400 K. The effect of the temperature on the series resistances RS, ideality factors n, the barrier height Φb and interface state density NSS obtained from the I–V and C–V characteristics were investigated. The n, Φb, RS, and NSS values were seen to be strongly temperature dependent. The ideality factors, series resistances and interface state densities decreased with increasing temperature for all diodes and the values of n, RS, and NSS obtained from I–V and C–V measurements were found in the ranges of 2.024–1.108, 2.083–1.121; 79.508–33.397 Ω; and 2.14×1013–0.216×1013 cm2 eV−1, 2.277×1013–0.254×1013 cm2 eV−1, respectively. The temperature dependence of energy distribution of interface state density (NSS) profiles has been determined from I–V measurements by taking into account the bias dependence of the effective barrier height and ideality factor.