Ab initio FP-LAPW study of the semiconductors SnO and SnO2

 Structural and electronic properties of tin oxides, SnO and SnO2, were studied using the full-potential linearized-augmented-plane-waves method within the local density and the generalized gradient approximations. Internal positional parameters, density of states and the electric-field gradient tensor at Sn sites were calculated. The results for the electronic and structural properties are compared to experimental measurements and with results obtained in different band-structure calculations.