کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816389 | 1025684 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Studies on the electrical properties of reactive DC magnetron-sputtered indium-doped silver oxide thin films: The role of oxygen
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Indium (â¼10Â at.%)-doped silver oxide (AIO) thin films have been prepared on glass substrates at room temperature (300Â K) by reactive DC magnetron sputtering technique using an alloy target made of pure (99.99%) silver and indium (90:10Â at.%) metals. The oxygen flow rates have been varied in the range 0.00-3.44Â sccm during sputtering. The X-ray diffraction data on these indium-doped silver oxide films show polycrystalline nature. With increasing oxygen flow rate, the carrier concentration, the Hall mobility and the electron mean free path decrease. These films show a very low positive temperature coefficient of resistivity â¼3.40Ã10â8Â ohm-cm/K. The work function values for these films (measured by Kelvin probe technique) are in the range 4.81-5.07Â eV. The high electrical resistivity indicate that the films are in the island state (size effects). Calculations of the partial ionic charge (by Sanderson's theory) show that indium doping in silver oxide thin films enhance the ionicity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 391, Issue 1, 15 March 2007, Pages 54-58
Journal: Physica B: Condensed Matter - Volume 391, Issue 1, 15 March 2007, Pages 54-58
نویسندگان
A. Subrahmanyam, Ullash Kumar Barik,