کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816396 | 1025684 | 2007 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Study of the electric properties of BiFe1−xZrxO3+δ films prepared by the sol–gel process Study of the electric properties of BiFe1−xZrxO3+δ films prepared by the sol–gel process](/preview/png/1816396.png)
BiFe1−xZrxO3+δ (BFZO) films were deposited on indium tin oxide (ITO)/glass substrates by sol–gel process and randomly oriented BFZO films with x=0–0.40 were obtained. We studied the effects of Zr substitution on structural, ferroelectric, dielectric and leakage conduction properties in BFZO system. R3 m structure was observed for all films, and pyrochlore phase began to occur for the film with x=0.20. Enhanced ferroelectric property was observed at room temperature because of the substitution of Zr for the films with x=0.05–0.20. The largest remnant polarization of 2.9 μC/cm2 was acquired in the film with x=0.20. Furthermore, it is observed that the dielectric constant was enhanced by the substitution of Zr. The film with x =0.10 has the largest dielectric constant at the same frequency. The leakage conduction was not reduced with the increase of Ti when x<0.20x<0.20 and was substantially reduced when x>0.10.
Journal: Physica B: Condensed Matter - Volume 391, Issue 1, 15 March 2007, Pages 103–107