کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1816407 1025684 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic structure and electron–phonon interaction in YAl2Si2
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electronic structure and electron–phonon interaction in YAl2Si2
چکیده انگلیسی

We calculate the electronic structure, phonon spectrum and electron–phonon (EP) interaction for YAl2Si2 using the full-potential, density-functional-based method. The Y 4d-like band crosses the Fermi level. The main contribution to the density of states (DOS) at the Fermi level comes from Y 4d-states. Our results for the phonon DOS and the Eliashberg spectral function show that in-plane bond-stretching modes have high frequency and couple more strongly to the electrons. Both the calculated EP coupling constant λλ (0.31) and the estimated superconducting transition temperature TCTC (0.15 K with μ*∼0.15μ*∼0.15) are very low in YAl2Si2. The differences of electronic structure, phonon structure and transport behavior between YAl2Si2 and CaAl2Si2 are discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 391, Issue 1, 15 March 2007, Pages 174–178
نویسندگان
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