کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816583 | 1525265 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural defects in SiC single crystals studied by small-angle neutron scattering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural defects in SiC single crystals studied by small-angle neutron scattering Structural defects in SiC single crystals studied by small-angle neutron scattering](/preview/png/1816583.png)
چکیده انگلیسی
Growth-induced structural defects such as hollow core super screw dislocation known as micropipes in silicon carbide single crystals grown by sublimation method are investigated. Electron microscopy as well as small-angle neutron scattering (SANS) techniques were used to resolve these defects in sizes. For SANS, scattering signals in the momentum transfer range 0.1-2.2Â nmâ1 were recorded. This corresponds for the periodic structure to length scale from 3 to 60Â nm approximately. Isotropic patterns were analyzed using spherical-shell model. The analyses showed that the small spherical defects are within a volume fraction less than 5% in these crystals. The change in the growth process such as growth rate and atmosphere showed no significant change in the sizes of these defects but has an effect on the distribution of these defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 385â386, Part 1, 15 November 2006, Pages 180-183
Journal: Physica B: Condensed Matter - Volumes 385â386, Part 1, 15 November 2006, Pages 180-183
نویسندگان
M. Nasir Khan, J. Bashir, Baek-Seok Seong, Chang-Hee Lee,