کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1816644 1525270 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Vibration problem of H in silicon
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Vibration problem of H in silicon
چکیده انگلیسی

A large discrepancy in the calculated frequency of Si–H bond in Si is found between the frozen-phonon calculation and molecular dynamic simulation. Differently from the frozen-phonon calculation, in which a linear chain structure Si–H–Si is assumed, the bond Si–H–Si is actually bending at finite temperatures. The H is rotating around the bond axis. On the average, H is observed as it were at the bond center. LDA calculation overestimates the bond length. The above two errors are cancelled out in the frozen-phonon calculation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 376–377, 1 April 2006, Pages 41–44
نویسندگان
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