کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816655 | 1525270 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms](/preview/png/1816655.png)
چکیده انگلیسی
The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 10B to 11B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 85-88
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 85-88
نویسندگان
N. Fukata, S. Fukuda, S. Sato, K. Ishioka, M. Kitajima, S. Hishita, K. Murakami,