کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816675 | 1525270 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Isochronal annealing studies of carbon-related defects in irradiated Si
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Isochronal annealing studies of carbon-related defects in irradiated Si Isochronal annealing studies of carbon-related defects in irradiated Si](/preview/png/1816675.png)
چکیده انگلیسی
We report infrared spectroscopy studies of defects in neutron-irradiated, carbon-doped, Cz-grown silicon. At room temperature irradiations, among the main defects formed are the CiCs and CiOi complexes. A peak in the spectra at 544 cmâ1 was found to be the contribution of two bands at 543.5 and 545.5 cmâ1. From the corresponding annealing behavior of these bands, the 543.5 cmâ1 band was correlated with the CiCs defect although the 544.5 cmâ1 band with the CiOi defect. At high-irradiation doses, complexes as the Ci(SiI) (953,960cm-1), CiOi(SiI)(934,1018cm-1), CiCs(SiI)(987,993cm-1) and CsCs(527cm-1) form. Isochronal anneals performed in order to study the thermal evolution of these centers, showed that the Ci(SiI) and CiOi(SiI) begin to decay in the spectra around 150 °C. Their disappearance is not accompanied by the emergence of any signal. The CiCs and the CiCs(SiI) centers begin to decay around â¼250âC. Their disappearance is accompanied by the emergence of two pairs of bands at (918,1006cm-1) and (945,964cm-1), respectively. The origin of the centers, giving rise to these bands is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 165-168
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 165-168
نویسندگان
C.A. Londos, M.S. Potsidi, G.D. Antonaras, A. Andrianakis,