کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816676 | 1525270 | 2006 | 4 صفحه PDF | دانلود رایگان |
The effect of the prior conventional furnace anneal at 1250 °C with different cooling rates on oxygen precipitation in Czochralski silicon during the subsequent low–high two-step heat treatment was investigated. In comparison with oxygen precipitation in the as-received sample, that in the samples with the prior 1250 °C anneal with fast or slow cooling rate was significantly enhanced. It is believed that the prior 1250 °C anneal with fast cooling rate introduced a considerable amount of vacancies, thus enhancing oxygen precipitation in the subsequent anneal; while, that with slow cooling rate substantially removed the silicon interstitials generated during the formation of grow-in oxygen precipitates, thus eliminating the retard effect on oxygen precipitation in the subsequent anneal.
Journal: Physica B: Condensed Matter - Volumes 376–377, 1 April 2006, Pages 169–172