کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816678 | 1525270 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Micro-characterisation of Si wafers by high-pressure thermopower technique
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the present work a set of Czochralski-grown silicon wafers (Cz-Si) differently pre-treated (annealed at high temperatures in pressure medium, doped with nitrogen, implanted with high-energy hydrogen ions) has been characterised by high-pressure thermopower S technique in the phase transitions region (0-20GPa). The shifts were observed in pressure of semiconductor-metal phase transition Pt determined from the S(P) under pre-treatments. For the first time, correlation dependence has been established between high-pressure thermoelectric properties on the one hand and concentration of residual interstitial oxygen cO (which is always present in Cz-Si) on the other hand. The dependence exhibited a maximum of Pt near cOâ¼9Ã1017cm-3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 177-180
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 177-180
نویسندگان
Sergey V. Ovsyannikov, Vsevolod V. Shchennikov Jr, Nadezda A. Shaydarova, Vladimir V. Shchennikov, Andrzej Misiuk, Deren Yang, Irina V. Antonova, Sergey N. Shamin,