کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1816688 | 1525270 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of nitrogen doping on denuded zone formed by rapid thermal process in Czochralski silicon wafer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Denuded zone (DZ) formed by rapid thermal process (RTP) followed with the low-high (Lo-Hi) annealing in nitrogen-doped Czochralski (NCZ) silicon wafer was studied in this paper. In comparison with the conventional CZ silicon, the DZ in NCZ silicon was a little narrower, while the bulk microdefects were much denser, as a result of nitrogen-enhanced oxygen precipitation. It was also found that DZs within CZ and NCZ silicon wafers shrunk notably when further subjected to rigorous oxygen precipitation annealing, however, a width of substantial DZ remained within either wafer. Furthermore, it is definitely proved that the nitrogen doping does not affect the formation of defect-free DZ by the RTP-based internal gettering (IG) process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 216-219
Journal: Physica B: Condensed Matter - Volumes 376â377, 1 April 2006, Pages 216-219
نویسندگان
Can Cui, Deren Yang, Xiangyang Ma, Ruixin Fan, Liben Li, Duanlin Que,