کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1816688 1525270 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of nitrogen doping on denuded zone formed by rapid thermal process in Czochralski silicon wafer
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effect of nitrogen doping on denuded zone formed by rapid thermal process in Czochralski silicon wafer
چکیده انگلیسی
Denuded zone (DZ) formed by rapid thermal process (RTP) followed with the low-high (Lo-Hi) annealing in nitrogen-doped Czochralski (NCZ) silicon wafer was studied in this paper. In comparison with the conventional CZ silicon, the DZ in NCZ silicon was a little narrower, while the bulk microdefects were much denser, as a result of nitrogen-enhanced oxygen precipitation. It was also found that DZs within CZ and NCZ silicon wafers shrunk notably when further subjected to rigorous oxygen precipitation annealing, however, a width of substantial DZ remained within either wafer. Furthermore, it is definitely proved that the nitrogen doping does not affect the formation of defect-free DZ by the RTP-based internal gettering (IG) process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 376–377, 1 April 2006, Pages 216-219
نویسندگان
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